unisonic technologies co., ltd 4N65Z power m o sfet www.unisonic.com.tw 1 of 8 copyright ? 2012 unisonic technologies co., ltd qw-r502-778.a 4 a , 650v n-channel power mosfet ? descripti on t h e ut c 4n65 z is a high volt age po w e r mosf et designe d to have b e tter ch aracteristics, s u ch as fast s w itching tim e , lo w g a te charg e , lo w on -state resistanc e an d h a ve a h i gh r ugg ed ava l anch e characteristic. t h is po w e r mosf et is usuall y use d in hi gh spee d s w itc h in g a ppl ications incl ud ing p o w e r s u ppli e s, pw m motor controls, hi gh e fficient dc to d c converters a nd bri dge circ ui ts. ? features * r ds (on) = 2 . 5 ? @v gs = 10 v * ultra lo w gat e char ge ( t y p i cal 15 n c ) * lo w r e verse t r ansfer capa citance ( c rs s = t y p i cal 8.0 p f ) * fast s w itchi n g cap abi lit y * avala n che e nerg y sp ecifie d * improved dv/ d t capa bil i t y , h i gh ru gg edn es s ? sy mbol to-220f 1 ? or de r i ng i n form at i o n ordering n u m ber package pin assignment packing lead free halogen free 1 2 3 4N65Zl- tf3-t 4N65Zg-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source http://
4N65Z power m o sfet unisonic technologi es co., ltd 2 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 8 . a ? absolute maxi mu m ra ting s (t c = 25 , unless other w i se specifie d) paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 650 v gate-source voltage v gss 30 v avala n che c u r r ent (note 2) i ar 4.4 a drain current contin uo us i d 4.0 a pulse d (note 2 ) i dm 16 a avalanche energy singl e puls ed ( note 3) e as 260 mj repetitiv e (not e 2) e ar 10.6 mj peak di ode r e cover y dv/dt (n ote 4) dv/dt 4.5 v/ns po w e r diss i pat ion p d 36 w junctio n t e mperature t j + 150 operatin g t e mperatur e t opr -55 ~ + 150 storage t e mperature t st g -55 ~ + 150 note: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitiv e rati ng : pulse w i dth limit ed b y m a xim u m juncti on temperature 3. l = 30mh, i as = 4 a , v dd = 5 0 v, r g = 25 ? , starting t j = 25c 4. i sd 4.4a, di/dt 20 0a/ s, v dd bv ds s , starting t j = 25c ? th er mal dat a paramet er symbol rat i ngs unit junctio n to ambient ja 62.5 /w junction to case jc 3.47 /w
4N65Z power m o sfet unisonic technologi es co., ltd 3 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 8 . a ? electric al ch ara cteri s tic s (t c = 25 , unless oth e r w is e specifi ed) paramet er symbol t es t conditions min t yp max unit off characteristics drain-source breakd o w n vo l t age bv ds s v gs = 0 v , i d = 250 a 650 v drain-s ource l eaka ge curr en t i ds s v ds = 650 v, v gs = 0 v 10 a gate-source l eaka ge curr en t fo rw ard i gss v gs = 30 v, v ds = 0 v 100 na reverse v gs = -30 v, v ds = 0 v -100 na breakd o w n vo ltage t e mperatur e coefficient bv ds s / t j i d = 250 a, ref e renc ed to 25 c 0.6 v/ on characteristics gate t hreshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-s ource on-state resistance r ds ( on ) v gs = 10 v, i d = 2.2a 2.4 2.5 ? dynamic characteristics input cap a cita nce c iss v ds = 25 v, v gs = 0v, f = 1mhz 520 670 pf output capac itance c oss 70 90 pf reverse t ransfer capacitance c rss 8 11 pf switching characteristics t urn-on delay time t d ( on ) v dd = 325v, i d = 4.0a, r g = 2 5 ? (note 1, 2) 13 35 ns t u rn-on rise t i me t r 45 100 ns t urn-off delay time t d ( off ) 25 60 ns t urn-off fall time t f 35 80 ns t o tal gate charge q g v ds = 520v,i d = 4.0a, v gs = 10v (note 1, 2) 15 20 nc gate-source c harge q gs 3.4 nc gate-drain charge q gd 7.1 nc source- drain diode ratings and characteristics drain-s ource diod e f o r w ard voltage v sd v gs = 0 v , i s = 4.4a 1.4 v maximum co n t inuo us drai n- source d i od e fo rw ard c u rren t i s 4.4 a maximum pu lsed dr ain-s ource d i od e fo rw ard c u rren t i sm 17.6 a reverse recover y time t r r v gs = 0 v , i s = 4.4a, di f /dt = 100 a/ s (note 1) 250 ns reverse recovery charge q rr 1.5 c note: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
4N65Z power m o sfet unisonic technologi es co., ltd 4 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 8 . a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * d v/dt control l ed b y r g * i sd co ntrol l ed b y p u l se peri o d * d.u.t.-de vice un der test - + peak dio d e reco v e r y d v /d t t est circu i t p. w. period d= v gs (d r i ve r) i sd (d .u .t . ) i fm , b ody di od e fo rward c u rren t di /d t i rm bo dy dio de r e ve rse curre nt b ody di od e reco very dv/dt bod y d iod e fo rwa r d volta ge dro p v dd 10v v ds (d.u.t. ) v gs = p.w. period peak dio d e r eco v e r y d v /d t w a v e fo rms
4N65Z power m o sfet unisonic technologi es co., ltd 5 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 8 . a ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% switching test circuit switching waveforms gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t ) unc l a m pe d in duc ti v e s w i t c h ing te s t circ uit unc l a m pe d in duc ti v e s w i t c h ing wav e forms
4N65Z power m o sfet unisonic technologi es co., ltd 6 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 8 . a ? ty pic al c h ara ct e ris tic s -100 drain-source br eak do w n voltage, bv dss (normalized) ( v ) junction temper ature, t j ( ) -50 50 200 100 1 5 0 1.2 0 1.1 1.0 0.9 0.8 n o te: 1. v gs =0v 2. i d =250a breakdown vol t age variation vs. tem perature -100 drain-source on-resistance, r ds( o n) (normalized) ( ? ) junc tion t emperatur e, t j ( ) -50 5 0 200 1 00 150 3.0 0 2.0 1.0 0.5 0.0 1.5 2.5 on-resistance junc tion t e mperatur e n o te: 1. v gs =10v 2. i d =4a 10 1 10 0.1 1 drain - to-so u rc e voltage, v ds (v) on-state chara c te ristics 0.1 2 g a t e-source volt age , v gs (v) transfer ch ara c t e ris t i c s 46 8 1 0 15 0 notes: 1. v ds =50v 2. 250s p u lse test 10 1 0.1 25 5. 0 v not e s: 1. 2 50s puls e t e st 2. t c =25 v gs top: 10v 9v 8v 7v 6v 5.5v 5 v b o ttor m :5.0v
4N65Z power m o sfet unisonic technologi es co., ltd 7 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 8 . a ? ty pic a l c h ara ct e r is tic s ( c ont.) 12 00 0 0.1 drain-sourcevoltage, v ds (v) 10 00 200 110 c iss 800 600 no t e s: 1. v gs =0v 2. f = 1mhz c iss= c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance characteristics (non-repetitive) 0 total gate charge, q g (nc) 5 15 25 note: i d =4a 8 10 12 10 6 4 2 0 v ds =120v v ds =300v v ds =4 80v 20 ga te c h a r ge ch ara c te rist ics c oss c rss 400 thermal response, jc (t) p d (w)
4N65Z power m o sfet unisonic technologi es co., ltd 8 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 8 . a ut c as s um es no r es pons i b ilit y f o r e q u ip m e n t f a ilu r e s t h a t r e s u lt f r o m u s in g p r oduc t s at v al ues t hat exceed, ev en m o m ent ar i l y , r a t ed v a l ues ( s uc h as m a x i m u m r a t i n g s , op era t i ng c o ndi t i on ra nges , o r ot her par am et er s ) l i s t ed i n pr oduc t s s pec i f i c at i ons of any and al l ut c pr oduc t s des c r i bed or c ont ai ned her ei n. ut c pr oduc t s are not des i gned f or us e i n l i f e s uppor t appl i anc es , dev i c es or s y s t em s w her e m a l f unc t i on of t hes e pr oduc t s c an be r eas ona bl y ex pec t ed t o res u l t i n per s ona l i n j u r y . re pro duc t i on i n w hol e or i n pa rt i s pr ohi bi t ed w i t hout t he pri o r w r i t t en c ons ent o f t he c o p y r i ght ow ner. t he i n f o r m at i o n pr es ent e d i n t h i s doc um en t do es not f o r m p a rt of any quo t a t i on or c ont r a c t , i s bel i e v ed t o be ac c u r a t e and r el i a bl e and m ay b e c hanged w i t hout n ot i c e.
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